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2SK3082(L),2SK3082(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 60 20 10 40 10
Unit V V A A A A mJ W C C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
10 8.5 30 150 -55 to +150
EAR
Pch Tch
Tstg
1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 -- -- 1.5 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.055 0.090 8 350 190 70 10 55 60 70 0.9 50 Max -- -- 10 10 2.5 0.075 0.150 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 5A, VGS = 10VNote4 I D = 5A, VGS = 4V Note4 I D = 5A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 5A, VGS = 10V RL = 6 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr
2
2SK3082(L),2SK3082(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
1.6
Drain to Source On State Resistance R DS(on) ( )
2.0
Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 10 V
1.2
0.8 I D = 10 A 0.4 5A 2A 12 4 8 Gate to Source Voltage 16 20 V GS (V)
0.05
0.02 0.01 1 2 5 10 20 50 Drain Current I D (A) 100
0
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4
Forward Transfer Admittance vs. Drain Current 20 10 5
Tc = -25 C
0.3 I D = 10 A 0.2 V GS = 4 V 0.1 0 -40 10 V 10 A 2, 5 A 5A 2A
25 C 75 C
2 1 0.5 0.1 0.2
V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A)
0 40 80 120 160 Case Temperature Tc (C)
4
2SK3082(L),2SK3082(S)
Body-Drain Diode Reverse Recovery Time 1000
Capacitance C (pF)
500
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage
200 100 50 20 10
di / dt = 50 A / s V GS = 0, Ta = 25 C
500 Ciss 200 Coss 100 50 20 10
Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50
5 0.1 0.2 0.5 1 2 Reverse Drain Current
10 20 I DR (A)
5
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V) V GS (V)
100
I D = 10A V DD = 10 V 25 V 50 V V DS V GS
20
1000 300
Switching Time t (ns)
Switching Characteristics
80
16
Drain to Source Voltage
60
12
Gate to Source Voltage
100 30 10 3 1 0.1
t d(off) tf t d(on) tr
40
8
20
V DD = 50 V 25 V 10 V 4 8 12 16 Gate Charge Qg (nc)
4 0 20
V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.2 0.5 1 5 10 20 2 Drain Current I D (A)
0
5
2SK3082(L),2SK3082(S)
Reverse Drain Current vs. Source to Drain Voltage 20
Reverse Drain Current I DR (A) Repetitive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 10 I AP = 10 A V DD = 25 V duty < 0.1 % Rg > 50
16 10 V 12 5V 8 V GS = 0, -5 V
8
6
4
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
2 0 25
50
75
100
125
150
Channel Temperature Tch (C)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
6
2SK3082(L),2SK3082(S)
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
7
2SK3082(L),2SK3082(S)
Package Dimensions Unit: mm
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
11.3 0.5
8.6 0.3 10.0 +0.3 -0.5
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
(1.5)
11.0 0.5
(1.5)
0.76 0.1
(1.5)
8.6 0.3 10.0 +0.3 -0.5
1.2 0.2 0.86 +0.2 -0.1
1.27 0.2
2.59 0.2
1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5
3.0 +0.3 -0.5
0.1 +0.2 -0.1 2.59 0.2 0.4 0.1
2.54 0.5
2.54 0.5
L type
S type
Hitachi Code EIAJ JEDEC
LDPAK -- --
8
2SK3082(L),2SK3082(S)
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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